类型 | 描述 |
---|---|
系列: | EF |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 193mOhm @ 9.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1081 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 114W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 8 x 8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTH4L160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 17.3A TO247 |
|
2N7002W-GComchip Technology |
MOSFET N-CH 60V 0.25A SOT323 |
|
SIPC03N50C3X1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
2SK1283(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP152Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT1201R6BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO-247 |
|
IRF9633Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RF1S30N06LESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2372(1)-ARochester Electronics |
DISCRETE / POWER MOSFET |
|
STFU25N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
|
PMZ130UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDMB506PRochester Electronics |
MOSFET P-CH 20V 6.8A 8MLP |
|
IXFP36N55X2Wickmann / Littelfuse |
IXFP36N55X2 |