English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.1mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 413 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 20655 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263-7 |
| 包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SJ205-AZRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
RFP7N40Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SIHG186N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 8.4A TO247AC |
|
|
IRFP246Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPC218N06N3X7SA1IR (Infineon Technologies) |
MV POWER MOS |
|
|
IPP80N04S2-H4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXTY90N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 90A TO252 |
|
|
2SJ211(0)-T1B-ARochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
DMN10H220LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.6A SOT23-3 |
|
|
IRLIZ24GPBFVishay / Siliconix |
MOSFET N-CHANNEL 60V 14A TO220 |
|
|
2SK2623-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
IXTY1R6N100D2-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 1.6A TO252 |
|
|
3LN03SS-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
