类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS10N3D2CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 151A POWER56 |
|
2SK2935-92-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0358DSP-01#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MMIX1F132N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 63A 24SMPD |
|
IPP65R190CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
AUIRFS3006-7P-IRRochester Electronics |
PFET, 240A I(D), 60V, 0.0021OHM, |
|
NVMFS6H848NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/59A 5DFN |
|
RJK0394DPA-02#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
DMTH69M8LFVWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI333 |
|
PSMN2R4-30MLD115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ166-L-ARochester Electronics |
P-CHANNEL, MOSFET |
|
NTMYS2D9N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/110A 4LFPAK |
|
2SJ529-91L-ERochester Electronics |
P-CHANNEL POWER MOSFET |