类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFP251Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ181-90STLRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTMFS0D9N03CGT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 48A/298A 5DFN |
|
SIL3415-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 4A SOT23-6L |
|
NTBLS1D1N08HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 41A/351A 8HPSOF |
|
IPA320N20NM3SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 26A TO220 |
|
RS1G201ATTB1ROHM Semiconductor |
MOSFET P-CH 40V 20A/78A 8HSOP |
|
TK4K1A60F,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
DMP22D4UFO-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 530MA 3DFN |
|
NTD4N60Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA126N10NM3SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 39A TO220 |
|
2SK1133(0)-T1B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TK1R5R04PB,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 160A D2PAK |