English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13.3A (Ta), 89A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.7mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2241 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.33W (Ta), 60W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK (SINGLE GAUGE) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0397DPA-0G#J7ARochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
IPW65R090CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
YJL05N04A-F2-0000HF |
N-CH MOSFET 40V 5A SOT-23-3L |
|
|
SIJ150DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK |
|
|
IPI60R165CPXKSA1IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
|
IXTA180N10T7-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO263-7 |
|
|
TPN5R203PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 38A 8TSON |
|
|
NVTFWS052P04M8LTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 4.7A/13.2A 8WDFN |
|
|
2SJ317NYTRRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
FCP11N60N-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.8A TO220F |
|
|
NTMFS4C10NBT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16.4A/46A 5DFN |
|
|
RFD3N08LSM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SPA06N60C3INRochester Electronics |
N-CHANNEL POWER MOSFET |
