类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 185mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1450 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 36W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 Isolated Tab |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS3D6N10MCLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 19.5A/131A 5DFN |
|
RJK6009DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AON2392Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 100V 8A 8DFN |
|
UPA2807T1L-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2869-91LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR91109ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPD80N04S306BATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL_30/40V |
|
2SK4180-T1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3511-S19-AYRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
MTB4N40ET4-ONRochester Electronics |
NFET D2PAK 400V 1.8R TR |
|
AOSN32338CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 3.7A SC70-3 |
|
HUF75321S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4855NT4HRochester Electronics |
N-CHANNEL POWER MOSFET |