类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF640RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TP65H070LSG-TRTransphorm |
GANFET N-CH 650V 25A PQFN88 |
|
UJ3C065030K3SUnitedSiC |
MOSFET N-CH 650V 85A TO247-3 |
|
IRFF9132Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
STB8N50ET4Rochester Electronics |
NFET D2PAK SPCL 500V TR |
|
FDMS0349Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SQD40N06-14L_T4GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A TO252AA |
|
MSC060SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 39A TO247-4 |
|
2SK2112-T2-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP89N04PDK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO263-3 |
|
IXTY02N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |
|
BUK7E5R2-100E,127-NXPRochester Electronics |
PFET, 120A I(D), 100V, 0.0052OHM |
|
DMTH8012LPSW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 53.7A PWRDI5060 |