类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 59A (Ta), 409A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 650µOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 280µA |
栅极电荷 (qg) (max) @ vgs: | 147 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 12300 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 4W (Ta), 187W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STU25N10F7STMicroelectronics |
MOSFET N-CH 100V 25A IPAK |
|
TK10A50W,S5XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
IPP070N06NGINRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVBG060N090SC1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 5.8/44A D2PAK-7 |
|
NTMTS0D4N04CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 79.8A 8DFNW |
|
HAT1125HWS-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTMFS08N2D5CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 166A POWER56 |
|
FDU3N50NZTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 2.5A DPAK3 |
|
FDU5N60NZTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4A DPAK3 |
|
PCFD18N20WSanyo Semiconductor/ON Semiconductor |
DIE MOSFET N-CH 200V UNIFET |
|
NTD15N06LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RF1S9630SMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SIPC69SN60C3X2SA1Rochester Electronics |
N-CHANNEL POWER MOSFET |