English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VN2406MRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
STD1028T4Rochester Electronics |
NFET DPAK SPCL 60V TR |
|
|
STD1059-001Rochester Electronics |
NFET DPAK SPECIAL |
|
|
RFP50N05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RFP6P08Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NVH4L160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 17.3A TO247 |
|
|
SI6933DQRochester Electronics |
P-CHANNEL MOSFET |
|
|
2SK1587-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPP65R155CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
DMN65D9L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V SOT23 |
|
|
NVATS5A302PLZT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 60V 80A ATPAK |
|
|
BUK7905-40AI127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
AUXGMFR120ZTRLIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
