CAP CER 110PF 63V C0G/NP0 0805
MOSFET N-CH 200V 42A TO204AE
类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 60mOhm @ 21A, 10V |
vgs(th) (最大值) @ id: | 4V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 220 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-204AE |
包/箱: | TO-204AE |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPS075N03LGBKMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 30V 50A TO251-3 |
|
IRFC260NBIR (Infineon Technologies) |
MOSFET 200V 50A DIE |
|
AOTF7T60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 7A TO220F |
|
JAN2N7224UMicrosemi |
MOSFET N-CH 100V 34A TO267AB |
|
AON6108FHAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 8DFN 5X6 |
|
2SJ598(0)-Z-E1-AZRenesas Electronics America |
TRANSISTOR |
|
STL3P6F6STMicroelectronics |
MOSFET P-CH 60V 3A POWERFLAT |
|
TK50E10K3(S1SS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 50A TO-220AB |
|
AO5401ELAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 500MA SC89-3 |
|
JANSR2N7389Microsemi |
MOSFET P-CH 100V 6.5A TO205AF |
|
92-0263PBFIR (Infineon Technologies) |
IC MOSFET |
|
JANTX2N6766T1Microsemi |
MOSFET N-CH 200V 30A TO254AA |
|
IRFC4568EFIR (Infineon Technologies) |
MOSFET N-CH WAFER |