English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A (Ta), 125A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.7mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 2510 pF @ 13 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.1W (Ta), 42W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ S3C |
| 包/箱: | DirectFET™ Isometric S3C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFC4468DIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
|
IPC60R070CFD7X7SA1IR (Infineon Technologies) |
MOSFET N-CH HI POWER WAFER |
|
|
5HP01C-TB-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 70MA SMD |
|
|
IRF6100PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 5.1A 4FLIPFET |
|
|
VQ1004P-E3Vishay / Siliconix |
MOSFET N-CH 60V 0.4A TO-205 |
|
|
ES6U41FU7T2CRROHM Semiconductor |
MOSFET/SCHOTTKY NCH SOT-563 |
|
|
IXTM24N50LWickmann / Littelfuse |
POWER MOSFET TO-3 |
|
|
IPB12CN10NGATMA2IR (Infineon Technologies) |
MOSFET N-CH 100V 67A TO263-3 |
|
|
IRLU3636-701TRPIR (Infineon Technologies) |
MOSFET N-CH 60V 50A IPAK |
|
|
JAN2N6782UMicrosemi |
MOSFET N-CH 100V 3.5A 18ULCC |
|
|
64-0055PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 160A TO220AB |
|
|
NP40N055KHE-E1-AYRenesas Electronics America |
TRANSISTOR |
|
|
APTML50UM90R020T1AGMicrosemi |
MOSFET N-CH 500V 52A SP1 |
