English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 3V, 4.5V |
| rds on (max) @ id, vgs: | 122mOhm @ 3.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5 nC @ 4.5 V |
| vgs (最大值): | +8V, -10V |
| 输入电容 (ciss) (max) @ vds: | 388 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 550mW (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-DFN2020MD (2x2) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
T-TD1R4N60P 11Wickmann / Littelfuse |
MOSFET N-CH 600V |
|
|
RJK6006DPP-A0#T2Renesas Electronics America |
MOSFET N-CH 600V 10A TO220FP |
|
|
APTM100DA18T1GMicrosemi |
MOSFET N-CH 1000V 40A SP1 |
|
|
IXTV18N60PSWickmann / Littelfuse |
MOSFET N-CH 600V 18A PLUS-220SMD |
|
|
FDPF035N06B-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 88A TO220F |
|
|
NDT02N60ZT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 300MA SOT223 |
|
|
NTMFS4C06NBT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A/69A 5DFN |
|
|
IXFM1633Wickmann / Littelfuse |
POWER MOSFET TO-3 |
|
|
FDC637ANNB5E023ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 6.2A SSOT-6 |
|
|
AUXEPF1405ZSIR (Infineon Technologies) |
MOSFET N-CH D2PAK |
|
|
IXTP28N15PWickmann / Littelfuse |
MOSFET N-CH TO-220 |
|
|
2SK3814(0)-Z-E2-AZRenesas Electronics America |
TRANSISTOR |
|
|
IPC90R500C3X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
