IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
MOSFET N-CHANNEL 30V 85A 8DFN
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 1.9V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 37 nC @ 1 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 2120 pF @ 15 V |
场效应管特征: | Schottky Diode (Body) |
功耗(最大值): | 42W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (5x6) |
包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIPC10N60CFDX1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
JANTXV2N6796Microsemi |
MOSFET N-CH 100V 8A TO205AF |
|
PCFG40N120ANFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH |
|
SI8809EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 1.9A MICROFOOT |
|
TP65H150G4LSGTransphorm |
GAN FET N-CH 650V PQFN |
|
ISP06P003NXTSA1IR (Infineon Technologies) |
SMALL SIGNAL MOSFETS |
|
T-FD28N50Q-72Wickmann / Littelfuse |
MOSFET N-CHANNEL |
|
CP398X-CTLDM303N-WNCentral Semiconductor |
MOSFET N-CH 30V 3.6A DIE |
|
R6025ANZFL1C8ROHM Semiconductor |
MOSFET N-CH 600V 25A TO3 |
|
IRFC4310EFIR (Infineon Technologies) |
MOSFET N-CH 100V DIE ON FILM |
|
CPC3730CWickmann / Littelfuse |
MOSFET N-CH 350V SOT89 |
|
R6535KNZC17ROHM Semiconductor |
MOSFET N-CH 650V 35A TO3 |
|
2SK3899(01)-ZK-E1-AYRenesas Electronics America |
TRANSISTOR |