DIODE SCHOTTKY 200V 20A TO262AA
MOSFET N-CH 650V 20.6A TO220F-3
类型 | 描述 |
---|---|
系列: | FRFET®, SuperFET® II |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 20.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 190mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | 78 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3055 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 39W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F-3 |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV2N7227UMicrosemi |
MOSFET N-CH 400V 14A TO267AB |
|
RJK0660DPA-WS#J5ARenesas Electronics America |
IGBT |
|
RJK1003DPP-A0#T2Renesas Electronics America |
MOSFET N-CH 100V 50A TO220FPA |
|
RJK1053DPB-WS#J5Renesas Electronics America |
IGBT |
|
NP22N055SLE(1)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
IXUV170N075SWickmann / Littelfuse |
MOSFET N-CH 75V 175A PLUS-220SMD |
|
IXFL44N60Wickmann / Littelfuse |
MOSFET N-CH 600V 41A ISOPLUS264 |
|
JAN2N6796Microsemi |
MOSFET N-CH 100V 8A TO39 |
|
MSC140SMA120SMicrosemi |
MOSFET N-CH 1200V D3PAK |
|
R6515ENZC8ROHM Semiconductor |
MOSFET N-CH 650V 15A TO3 |
|
JANSR2N7380Microsemi |
MOSFET N-CH 100V 14.4A TO257 |
|
94-2355PBFIR (Infineon Technologies) |
MOSFET N-CH 100V TO-220AB |
|
NP109N055PUJ-E2B-AYRenesas Electronics America |
TRANSISTOR |