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DGTL ISO 2500VRMS 4CH GP 16SOIC
MOSFET N-CH 80V DPAK
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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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|
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CONSUMER |
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|
|
HAF1004-90STR-ERenesas Electronics America |
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|
|
AOTF12N60FD_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V TO220F |
|
|
APTM50DAM38TGMicrosemi |
MOSFET N-CH 500V 90A SP4 |
|
|
IRFC3006EBIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
|
STW35N60M2-EPSTMicroelectronics |
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