类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPD703014BGC-A33-8EU-ARenesas Electronics America |
MOSFET N-CH |
|
DMJ70H1D0SV3Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 700V 6A TO251 |
|
CDM4-600LR BKCentral Semiconductor |
MOSFET N-CH 4A 600V DPAK |
|
AONS36386Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V DFN 5X6 |
|
EPC2025EPC |
GANFET N-CH 300V 4A DIE |
|
AOD4TL60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH DPAK |
|
2SK3408-T1B-ATRenesas Electronics America |
MOSFET N-CH 43V 1A SC96-3 |
|
64-2143PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
JANTXV2N6760Microsemi |
MOSFET N-CH 400V 5.5A TO204AA |
|
APT5022BNGMicrosemi |
MOSFET N-CH 500V 27A TO247AD |
|
2N6768T1Microsemi |
MOSFET N-CH 400V 14A TO254AA |
|
APTM50DAM38CTGMicrosemi |
MOSFET N-CH 500V 90A SP4 |
|
STL287N4F7AGSTMicroelectronics |
MOSFET N-CH 40V PWRFLAT 8X8 |