English
简体中文
RES 10.7 OHM 1/8W .1% AXIAL
RES 0.03 OHM 5% 2W J LEAD
SWITCH SNAP ACT SPST-NC 11A 125V
MOSFET N-CH TO252
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
R6524ENZC8ROHM Semiconductor |
MOSFET N-CH 650V 24A TO3 |
|
|
R6524KNZC8ROHM Semiconductor |
MOSFET N-CH 650V 24A TO3 |
|
|
APTM20DAM10TGMicrosemi |
MOSFET N-CH 200V 175A SP4 |
|
|
JANTX2N6798UMicrosemi |
MOSFET N-CH 200V 5.5A 18ULCC |
|
|
2SJ690-T1B-ATRenesas Electronics America |
MOSFET P-CH 30V 2.5A SC96-3 |
|
|
IXTM1712Wickmann / Littelfuse |
POWER MOSFET TO-3 |
|
|
AUXCLF1404STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 162A D2PAK |
|
|
UPA1912TE(0)-T1-ATRenesas Electronics America |
MOSFET P-CH 12V 4.5A SC95 |
|
|
IPC60R380C6X7SA1IR (Infineon Technologies) |
MOSFET N-CH |
|
|
RJK0452DPB-WS#J5Renesas Electronics America |
IGBT |
|
|
64-2116PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 130A D2PAK |
|
|
APT1001R1BNRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 10.5A TO247AD |
|
|
SI5480DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK |