English
简体中文
THICKFILM RESISTOR 0805
RES SMD 5.6K OHM 1% 1/4W 1206
PTC RESET FUSE 33V 1.1A 1812
MOSFET N-CH 40V 60A TO262-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.3mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3680 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.8W (Ta), 105W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262-3 |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AUXVNGP4062D-EIR (Infineon Technologies) |
IC DISCRETE |
|
|
TPCA8031-H(TE12L,QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 24A 8SOP |
|
|
UPA1902TE-T1-ARenesas Electronics America |
TRANSISTOR |
|
|
RJK0655DPB-WS#J5Renesas Electronics America |
IGBT |
|
|
JANTX2N6800Microsemi |
MOSFET N-CH 400V 3A TO205AF |
|
|
N0609N-S19-AY#YWRenesas Electronics America |
MOSFET N-CHANNEL |
|
|
IRFC3415BIR (Infineon Technologies) |
MOSFET 150V 43A DIE |
|
|
AO8807LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 8TSSOP |
|
|
94-2312PBFIR (Infineon Technologies) |
IC MOSFET |
|
|
MT8386M5Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V |
|
|
AOTF12N50_007Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |
|
|
CMPDM303NH BKCentral Semiconductor |
MOSFET N-CH 30V 3.6A SOT23F |
|
|
CTLDM7120-M621H BKCentral Semiconductor |
MOSFET N-CH 20V 1A TLM621H |