English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarP2™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 170mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 93 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 5500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 540W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PLUS-220SMD |
| 包/箱: | PLUS-220SMD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFC5210BIR (Infineon Technologies) |
MOSFET 100V 40A DIE |
|
|
2SK3901(0)-ZK-E1-AYRenesas Electronics America |
TRANSISTOR |
|
|
2SK3816-DL-1EXSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH |
|
|
SPP07N60S5HKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
|
2SK3755-AZRenesas Electronics America |
TRANSISTOR |
|
|
2SK2225-ERenesas Electronics America |
MOSFET N-CH 1500V 2A TO3PFM |
|
|
PSMN1R6-60CLJNexperia |
MOSFET N-CH 60V DPAK |
|
|
IPC95R750P7X7SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
ISP06P005NSATMA1IR (Infineon Technologies) |
MOSFET P-CH SOT223-3 |
|
|
N0435N#YWRenesas Electronics America |
MOSFET N-CHANNEL |
|
|
AO4478LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8SOIC |
|
|
JAN2N6782Microsemi |
MOSFET N-CH 100V 3.5A TO39 |
|
|
R6024KNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 24A TO247 |
