English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarHV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 270mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2630 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 350W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PLUS-220SMD |
| 包/箱: | PLUS-220SMD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUXDILZ24NSIR (Infineon Technologies) |
MOSFET N-CH D2PAK |
|
|
SIPC36AN20X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
|
V30432-T1-GE3Vishay / Siliconix |
MOSFET N-CH SMD |
|
|
IPL65R340CFDAUMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 10.9A 4VSON |
|
|
2N6800UMicrosemi |
MOSFET N-CH 400V 3A 18ULCC |
|
|
2N6798UMicrosemi |
MOSFET N-CH 200V 5.5A 18ULCC |
|
|
UPA1763G(0)-E2-ATRenesas Electronics America |
TRANSISTOR |
|
|
TPCA8105(TE12L,Q,MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 12V 6A 8SOP |
|
|
2N7224Microsemi |
MOSFET N-CH 100V 34A TO254AA |
|
|
JANTX2N6798Microsemi |
MOSFET N-CH 200V 5.5A TO205AF |
|
|
IXFX32N48QWickmann / Littelfuse |
MOSFET N-CH PLUS247 |
|
|
NDT02N60ZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 300MA SOT223 |
|
|
APTM100SK18TGMicrosemi |
MOSFET N-CH 1000V 43A SP4 |
