类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV2N6849UMicrosemi |
MOSFET P-CH 100V 6.5A 18ULCC |
|
APT130SM70SMicrosemi |
MOSFET N-CH 700V D3PAK |
|
IRFH7187TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 18A/105A 8PQFN |
|
JANTXV2N6756Microsemi |
MOSFET N-CH 100V 14A TO204AA |
|
R6015ANZFU7C8ROHM Semiconductor |
MOSFET N-CH 600V 15A TO3 |
|
SPP11N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO-220 |
|
TPCC8065-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 13A 8TSON |
|
JANSR2N7381Microsemi |
MOSFET N-CH 200V 9.4A TO257 |
|
APTC80SK15T1GMicrosemi |
MOSFET N-CH 800V 28A SP1 |
|
APTM120U10DAGMicrosemi |
MOSFET N-CH 1200V 160A SP6 |
|
STP48N30M8STMicroelectronics |
MOSFET N-CH 300V TO220 |
|
CPC3701CWickmann / Littelfuse |
MOSFET N-CH 60V SOT89 |
|
2N6784UMicrosemi |
MOSFET N-CH 200V 2.25A 18ULCC |