类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 110A |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 8mOhm @ 110A, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | Die |
包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN8R5-100ESFQNexperia |
MOSFET N-CHANNEL 100V 97A I2PAK |
|
EFC4621R-A-TRSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 6A EFCP |
|
TPCA8011-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 40A 8SOP |
|
IXTM40N30Wickmann / Littelfuse |
MOSFET N-CH 300V 40A TO204AE |
|
JANTX2N6764T1Microsemi |
MOSFET N-CH 100V 38A TO254AA |
|
STD5407NNT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V DPAK-3 |
|
2N7002-7-GZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V SOT23-3 |
|
CTLDM8002A-M621H TRCentral Semiconductor |
MOSFET P-CH 50V 280MA TLM621H |
|
CP805-CXDM4060P-CTCentral Semiconductor |
MOSFET P-CH 40V 6.4A DIE |
|
94-2309PBFIR (Infineon Technologies) |
IC MOSFET |
|
AOD413A_002Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V TO252 |
|
JANTX2N7225UMicrosemi |
MOSFET N-CH 200V 27.4A TO267AB |
|
94-2311PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |