English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFC4020DIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
|
SI5479DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 16A PPAK |
|
|
UPA3710T1A-E2-AY#YWRenesas Electronics America |
MOSFET N-CH |
|
|
RJK5033DPD-01#J2Renesas Electronics America |
MOSFET N-CH GENERAL PURPOSE |
|
|
VEC2415-TL-EXSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |
|
|
2SJ599(0)-Z-E2-AZRenesas Electronics America |
TRANSISTOR |
|
|
NVMFS4C310NWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V TRENCH |
|
|
SI5484DU-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 12A PPAK |
|
|
NVD4810NT4G-TB01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/54A DPAK-3 |
|
|
AOTF12N50_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |
|
|
PMV62XN,215NXP Semiconductors |
MOSFET N-CH SOT-23 |
|
|
UPA2765T1A-E2-AYRenesas Electronics America |
MOSFET N-CH 30V 100A 8HVSON |
|
|
RQA0004PXDQS#H1Renesas Electronics America |
MOSFET N-CH 16V 300MA UPAK |
