English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 67A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 33.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-204AE |
| 包/箱: | TO-204AE |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFC4905BIR (Infineon Technologies) |
MOSFET 55V 42A DIE |
|
|
JANTX2N6796Microsemi |
MOSFET N-CH 100V 8A TO205AF |
|
|
IRFH7184ATRPBFIR (Infineon Technologies) |
MOSFET N-CH 8-TDSON |
|
|
JANTX2N6758Microsemi |
MOSFET N-CH 200V 9A TO204AA |
|
|
IRLC024NBIR (Infineon Technologies) |
MOSFET 55V 17A DIE |
|
|
RQHC6140-6DWA#W0Renesas Electronics America |
MOSFET N-CH |
|
|
TPCA8103(TE12L,Q,MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 40A 8SOP |
|
|
APTM20SKM05GMicrosemi |
MOSFET N-CH 200V 317A SP6 |
|
|
HAT1069C-EL-ERenesas Electronics America |
MOSFET P-CH 12V 4A 6CMFPAK |
|
|
64-2155PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 86A D2PAK |
|
|
IXFF24N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 22A I4PAC |
|
|
SI5482DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK |
|
|
IXTV26N50PSWickmann / Littelfuse |
MOSFET N-CH 500V 26A PLUS-220SMD |
