类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV2N6784Microsemi |
MOSFET N-CH 200V 2.25A TO205AF |
|
RJK0654DPB-WS#J5Renesas Electronics America |
IGBT |
|
NP109N04PUJ-E2B-AYRenesas Electronics America |
TRANSISTOR |
|
IXTM12N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO204AA |
|
V30429-T1-GE3Vishay / Siliconix |
MOSFET N-CH SMD |
|
RQK0608BQDQS#H1Renesas Electronics America |
MOSFET |
|
NTMKE4891NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 26.7A 4ICEPAK |
|
TPCF8102(TE85L,F,MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A VS-8 |
|
NP110N055PUJ-E1B-AYRenesas Electronics America |
TRANSISTOR |
|
AON6362FHAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 27A/60A 8DFN |
|
JAN2N6764T1Microsemi |
MOSFET N-CH 100V 38A TO254AA |
|
NTMFS4833NST3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/156A SO-8FL |
|
IXTM11N80Wickmann / Littelfuse |
MOSFET N-CH 800V 11A TO204AA |