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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
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MOSFET N-CH 30V 13A/55A TO251A |
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WPB4001-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 26A TO3P-3L |
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JANTX2N6762Microsemi |
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AON7452LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8DFN |
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MOSFET N-CH 100V 1.69A TO205AF |
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MOSFET N-CH 600V 30A TO3PF |
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JANSR2N7268UMicrosemi |
MOSFET N-CH 100V 34A U1 |
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IPC60R190E6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
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AOTF18N65_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |
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62-0095PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 10A/12A 8SOIC |
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APT5025BNMicrosemi |
MOSFET N-CH 500V 23A TO247AD |
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2N7002KX-7Zetex Semiconductors (Diodes Inc.) |
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CP773-CMPDM302PH-WNCentral Semiconductor |
MOSFET P-CH 30V 2.4A DIE |
