类型 | 描述 |
---|---|
系列: | POWER MOS 7® |
包裹: | Tube |
零件状态: | Active |
igbt型: | PT |
配置: | Single |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 100 A |
功率 - 最大值: | 329 W |
vce(on) (max) @ vge, ic: | 2.7V @ 15V, 50A |
电流 - 集电极截止(最大值): | 500 µA |
输入电容 (cies) @ vce: | 5.7 nF @ 25 V |
输入: | Standard |
ntc热敏电阻: | No |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SOT-227-4, miniBLOC |
供应商设备包: | ISOTOP® |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FS75R07W2E3B11ABOMA1IR (Infineon Technologies) |
IGBT MODULES |
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APT60GA60JD60Roving Networks / Microchip Technology |
IGBT MOD 600V 112A 356W ISOTOP |
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MG1225H-XBN2MMWickmann / Littelfuse |
IGBT MOD 1200V 25A 105W |
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FF6MR12W2M1PB11BPSA1IR (Infineon Technologies) |
IGBT MODULE LOW POWER EASY |
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FF1500R17IP5PBPSA1IR (Infineon Technologies) |
IGBT MOD 1700V 1500A AGPRIME3+-5 |
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APT40GP90JRoving Networks / Microchip Technology |
IGBT MODULE 900V 68A 284W ISOTOP |
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FD200R12PT4B6BOSA1Rochester Electronics |
FD200R12 - IGBT MODULE |
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APTGT400DU120GRoving Networks / Microchip Technology |
IGBT MODULE 1200V 560A 1785W SP6 |
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FS500R17OE4DPBOSA1IR (Infineon Technologies) |
IGBT MOD 1700V 1000A 20MW |
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FF900R12IP4DVBOSA1Rochester Electronics |
FF900R12 - INSULATED GATE BIPOLA |
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FD300R12KS4HOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 370A 1950W |
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FZ3600R17HE4HOSA2IR (Infineon Technologies) |
IGBT MODULE 1700V 7200A |
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FS25R12W1T4BOMA1IR (Infineon Technologies) |
IGBT MOD 1200V 45A 205W |