类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
igbt型: | Trench Field Stop |
配置: | 2 Independent |
电压 - 集电极发射极击穿(最大值): | 650 V |
电流 - 集电极 (ic) (max): | 450 A |
功率 - 最大值: | 1.15 W |
vce(on) (max) @ vge, ic: | 1.95V @ 15V, 400A |
电流 - 集电极截止(最大值): | - |
输入电容 (cies) @ vce: | 26 nF @ 25 V |
输入: | Standard |
ntc热敏电阻: | Yes |
工作温度: | -40°C ~ 150°C |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
A2C35S12M3-FSTMicroelectronics |
IGBT MOD 1200V 35A 250W ACEPACK2 |
|
MG12200D-BN2MMWickmann / Littelfuse |
IGBT MODULE 1200V 290A 1050W D3 |
|
FP25R12KE3BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 40A 155W |
|
F43L50R07W2H3FB11BPSA2IR (Infineon Technologies) |
IGBT MOD 650V 50A 20MW |
|
FP75R12KE3BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 105A 355W |
|
FMG2G50US60Rochester Electronics |
IGBT, 50A, 600V, N-CHANNEL |
|
NXH35C120L2C2SGSanyo Semiconductor/ON Semiconductor |
IGBT MODULE, CIB 1200 V, 35 A IG |
|
APT45GP120JDQ2Roving Networks / Microchip Technology |
IGBT MOD 1200V 75A 329W ISOTOP |
|
FF300R12KT3HOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 480A 1450W |
|
BSM50GP120BOSA1IR (Infineon Technologies) |
IGBT MODULE 1200V 50A |
|
MG1225H-XN2MMWickmann / Littelfuse |
IGBT MOD 1200V 40A 147W |
|
FF900R12IP4PBOSA1Rochester Electronics |
FF900R12 - IGBT MODULE |
|
APTCV60HM45RT3GRoving Networks / Microchip Technology |
IGBT MODULE 600V 50A 250W SP3 |