INSULATED GATE BIPOLAR TRANSISTO
CAP CER 2.2UF 50V X7R 1206
MEMS OSC XO 150.5000MHZ LVPECL
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
igbt型: | - |
配置: | Half Bridge |
电压 - 集电极发射极击穿(最大值): | 3.3 V |
电流 - 集电极 (ic) (max): | 1 A |
功率 - 最大值: | 9.6 W |
vce(on) (max) @ vge, ic: | 4.25V @ 15V, 800A |
电流 - 集电极截止(最大值): | 5 mA |
输入电容 (cies) @ vce: | 100 nF @ 25 V |
输入: | Standard |
ntc热敏电阻: | No |
工作温度: | -40°C ~ 125°C |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FF300R07KE4HOSA1IR (Infineon Technologies) |
IGBT MODULE 650V 940W |
|
FF200R33KF2CNOSA1Rochester Electronics |
IGBT MODULE |
|
FS100R12KS4BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 130A 660W |
|
FS150R07N3E4B11BOSA1Rochester Electronics |
IGBT MODULE |
|
FF400R06KE3HOSA1IR (Infineon Technologies) |
IGBT MOD 600V 500A 1250W |
|
FPF2G120BF07ASSanyo Semiconductor/ON Semiconductor |
IGBT MODULE 650V 40A 156W F2 |
|
APTGT50DH120TGRoving Networks / Microchip Technology |
IGBT MODULE 1200V 75A 277W SP4 |
|
DD1200S12H4HOSA1IR (Infineon Technologies) |
IGBT MODULE 1200V 1200A |
|
FP50R07N2E4BOSA1IR (Infineon Technologies) |
IGBT MODULE 650V 70A |
|
FS450R12OE4BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 660A 2250W |
|
FS30R06W1E3BOMA1IR (Infineon Technologies) |
IGBT MODULE 600V 60A 150W |
|
DF300R12KE3HOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 480A 1470W |
|
APTGT75A60T1GRoving Networks / Microchip Technology |
IGBT MODULE 600V 100A 250W SP1 |