RES 15K OHM 6.5W 5% AXIAL
CAP ALUM 5600UF 20% 50V SNAP
FS50R12 - IGBT MODULE
TVS DIODE
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
igbt型: | Trench Field Stop |
配置: | Full Bridge |
电压 - 集电极发射极击穿(最大值): | 1.2 V |
电流 - 集电极 (ic) (max): | 50 A |
功率 - 最大值: | 280 W |
vce(on) (max) @ vge, ic: | 2.15V @ 15V, 50A |
电流 - 集电极截止(最大值): | 1 mA |
输入电容 (cies) @ vce: | 2.8 nF @ 25 V |
输入: | Standard |
ntc热敏电阻: | Yes |
工作温度: | -40°C ~ 150°C |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CPV363M4UVishay General Semiconductor – Diodes Division |
IGBT MODULE 600V 13A 36W IMS-2 |
|
FP25R12KT3BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 40A 155W |
|
APT30GP60JDQ1Microsemi |
IGBT MODULE 600V 67A 245W ISOTOP |
|
FS75R12W2T4B11BOMA1IR (Infineon Technologies) |
IGBT MOD 1200V 107A 375W |
|
IXYN82N120C3H1Wickmann / Littelfuse |
IGBT MOD 1200V 105A 500W SOT227B |
|
APTGT75A120T1GRoving Networks / Microchip Technology |
IGBT MODULE 1200V 110A 357W SP1 |
|
F4200R17N3E4BPSA1IR (Infineon Technologies) |
IGBT MOD 1700V 200A 20MW |
|
FP100R12KT4PB11BPSA1IR (Infineon Technologies) |
IGBT MODULE LOW PWR ECONO3-3 |
|
FF300R12ME4PB11BPSA1IR (Infineon Technologies) |
IGBT MOD 1200V 600A 20MW |
|
GSID300A120S5C1SemiQ |
IGBT MOD 1200V 430A 1630W |
|
FP150R12KT4B11BPSA1Rochester Electronics |
FP150R12 - IGBT MODULE |
|
F3L300R12ME4B23BOSA1Rochester Electronics |
F3L300R12 - IGBT MODULE |
|
APTGT100H60T3GRoving Networks / Microchip Technology |
IGBT MODULE 600V 150A 340W SP3 |