类型 | 描述 |
---|---|
系列: | Power-SPM™ |
包裹: | Tube |
零件状态: | Obsolete |
igbt型: | - |
配置: | Half Bridge |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 50 A |
功率 - 最大值: | 250 W |
vce(on) (max) @ vge, ic: | 2.8V @ 15V, 50A |
电流 - 集电极截止(最大值): | 250 µA |
输入电容 (cies) @ vce: | 2.92 nF @ 30 V |
输入: | Standard |
ntc热敏电阻: | No |
工作温度: | -40°C ~ 125°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | EPM7 |
供应商设备包: | EPM7 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FZ500R65KE3NOSA1IR (Infineon Technologies) |
IGBT MODULE 6500V 1000A |
|
IFF600B12ME4B11BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 600A 20MW ECONO |
|
FF900R12IP4VBOSA1Rochester Electronics |
FF900R12 - INSULATED GATE BIPOLA |
|
FF150R12RT4HOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 150A 790W |
|
IXYN100N65C3H1Wickmann / Littelfuse |
IGBT MOD 650V 166A 600W SOT227B |
|
APT40GLQ120JCU2Roving Networks / Microchip Technology |
IGBT MOD 1200V 80A 312W SOT227 |
|
FS200R07N3E4RB11BOSA1IR (Infineon Technologies) |
IGBT MOD 650V 200A 600W |
|
FD900R12IP4DVBOSA1Rochester Electronics |
FD900R12 - INSULATED GATE BIPOLA |
|
FP25R12KT3BPSA1IR (Infineon Technologies) |
LOW POWER ECONO |
|
APT200GT60JRRoving Networks / Microchip Technology |
IGBT MOD 600V 195A 500W SOT227 |
|
FD200R12KE3HOSA1IR (Infineon Technologies) |
IGBT MODULE 1200V 1050W |
|
FS100R12KE3BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 140A 480W |
|
A2C35S12M3STMicroelectronics |
IGBT MOD 1200V 35A 250W ACEPACK2 |