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| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 7® |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | PT |
| 配置: | Single |
| 电压 - 集电极发射极击穿（最大值）: | 1200 V |
| 电流 - 集电极 (ic) (max): | 64 A |
| 功率 - 最大值: | 284 W |
| vce(on) (max) @ vge, ic: | 3.9V @ 15V, 35A |
| 电流 - 集电极截止（最大值）: | 250 µA |
| 输入电容 (cies) @ vce: | 3.24 nF @ 25 V |
| 输入: | Standard |
| ntc热敏电阻: | No |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | ISOTOP |
| 供应商设备包: | ISOTOP® |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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