类型 | 描述 |
---|---|
系列: | POWER MOS 8™ |
包裹: | Tube |
零件状态: | Active |
igbt型: | PT |
配置: | Single |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 87 A |
功率 - 最大值: | 283 W |
vce(on) (max) @ vge, ic: | 2.5V @ 15V, 47A |
电流 - 集电极截止(最大值): | 275 µA |
输入电容 (cies) @ vce: | 6.32 nF @ 25 V |
输入: | Standard |
ntc热敏电阻: | No |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SOT-227-4, miniBLOC |
供应商设备包: | ISOTOP® |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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