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MOSFET N-CH 850V 3.5A TO252
DIODE GEN PURP 50V 1A SUB SMA
IGBT MOD 1200V 55A 260W SOT227
CASE ALUM NAT 17.15"L X 17.67"W
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| igbt型: | Trench Field Stop |
| 配置: | Single |
| 电压 - 集电极发射极击穿（最大值）: | 1200 V |
| 电流 - 集电极 (ic) (max): | 55 A |
| 功率 - 最大值: | 260 W |
| vce(on) (max) @ vge, ic: | 2.1V @ 15V, 35A |
| 电流 - 集电极截止（最大值）: | 5 mA |
| 输入电容 (cies) @ vce: | 2.53 nF @ 25 V |
| 输入: | Standard |
| ntc热敏电阻: | No |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | ISOTOP |
| 供应商设备包: | SOT-227 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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