类型 | 描述 |
---|---|
系列: | IGBTMOD™ |
包裹: | Bulk |
零件状态: | Obsolete |
igbt型: | - |
配置: | Half Bridge |
电压 - 集电极发射极击穿(最大值): | 1200 V |
电流 - 集电极 (ic) (max): | 200 A |
功率 - 最大值: | 1250 W |
vce(on) (max) @ vge, ic: | 2.6V @ 15V, 200A |
电流 - 集电极截止(最大值): | 1 mA |
输入电容 (cies) @ vce: | 35 nF @ 10 V |
输入: | Standard |
ntc热敏电阻: | Yes |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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