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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| igbt型: | - |
| 配置: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 功率 - 最大值: | - |
| vce(on) (max) @ vge, ic: | - |
| 电流 - 集电极截止（最大值）: | - |
| 输入电容 (cies) @ vce: | - |
| 输入: | - |
| ntc热敏电阻: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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APTGT50TL60T3GRoving Networks / Microchip Technology |
IGBT MODULE 600V 80A 176W SP3 |
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FS75R07N2E4BOSA1IR (Infineon Technologies) |
IGBT MODULE 650V 75A 250W |
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MID145-12A3Wickmann / Littelfuse |
IGBT MODULE 1200V 160A 700W Y4M5 |
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BSM200GA170DLCHOSA1Rochester Electronics |
BSM200GA170 - INSULATED GATE BIP |
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BSM35GD120DN2E3224BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 50A 280W |
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DDB2U50N08W1RB23BOMA2IR (Infineon Technologies) |
IGBT MOD DIODE BRIDGE EASY1B-2-1 |
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FS100R07N3E4B11BOSA1Rochester Electronics |
FS100R07N3E4B_11 - IGBT MODULE |
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PSDC312E8427618NOSA1IR (Infineon Technologies) |
MOD IGBT STACK PSAO-1 |
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APTGT150TDU60PGRoving Networks / Microchip Technology |
IGBT MODULE 600V 225A 480W SP6P |
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APTGLQ200A120T3AGRoving Networks / Microchip Technology |
IGBT MOD 1200V 400A 1250W SP3F |
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900545HOSA1Rochester Electronics |
IGBT MODULE |
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FF1000R17IE4DB2BOSA1IR (Infineon Technologies) |
IGBT MODULE 1700V 6250W |
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|
BSM100GB120DN2KHOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 145A 700W |
