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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| igbt型: | - |
| 配置: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 功率 - 最大值: | - |
| vce(on) (max) @ vge, ic: | - |
| 电流 - 集电极截止（最大值）: | - |
| 输入电容 (cies) @ vce: | - |
| 输入: | - |
| ntc热敏电阻: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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APTGT200SK60T3AGRoving Networks / Microchip Technology |
IGBT MODULE 600V 290A 750W SP3 |
|
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MG17300D-BN4MMWickmann / Littelfuse |
IGBT MODULE 1700V 400A 1450W D3 |
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APTGLQ40HR120CT3GRoving Networks / Microchip Technology |
IGBT MODULE 1200V 75A 250W SP3 |
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APTGT225SK170GRoving Networks / Microchip Technology |
IGBT MODULE 1700V 340A 1250W SP6 |
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APTGT50H60T1GRoving Networks / Microchip Technology |
IGBT MODULE 600V 80A 176W SP1 |
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APTGL40X120T3GRoving Networks / Microchip Technology |
IGBT MODULE 1200V 65A 220W SP3 |
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NXH100B120H3Q0STGSanyo Semiconductor/ON Semiconductor |
IGBT MODULE 1200V 50A 186W PIM22 |
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IFS75S12N3T4_B11Rochester Electronics |
TRANSISTOR IGBT MODULE |
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IXBN42N170AWickmann / Littelfuse |
IGBT MOD 1700V 42A 312W SOT227B |
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FF600R12IS4FIR (Infineon Technologies) |
IGBT MOD 1200V 600A 3700W |
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FS100R12N2T4B11BOSA1IR (Infineon Technologies) |
IGBT MOD 1200V 100A 20MW ECONO |
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FS800R07A2E3B32BOSA1IR (Infineon Technologies) |
IGBT MODULES |
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MII75-12A3Wickmann / Littelfuse |
IGBT MODULE 1200V 90A 370W Y4M5 |
