English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | PT, Trench |
| 配置: | Half Bridge |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 580 A |
| 功率 - 最大值: | 1136 W |
| vce(on) (max) @ vge, ic: | 1.45V @ 15V, 300A |
| 电流 - 集电极截止（最大值）: | 150 µA |
| 输入电容 (cies) @ vce: | - |
| 输入: | Standard |
| ntc热敏电阻: | No |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | Dual INT-A-PAK (3 + 8) |
| 供应商设备包: | Dual INT-A-PAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-GB150TH120NVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 300A INT-A-PAK |
|
|
MIO1200-33E10Wickmann / Littelfuse |
IGBT MODULE 3300V 1200A E10 |
|
|
APTGT400SK120D3GMicrosemi |
IGBT MODULE 1200V 580A 2100W D3 |
|
|
VS-GB300TH120UVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 530A INT-A-PAK |
|
|
APTGF360U60D4GMicrosemi |
IGBT MODULE 600V 450A 1560W D4 |
|
|
VS-GB400TH120UVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 660A INT-A-PAK |
|
|
IRG7T150HF12BIR (Infineon Technologies) |
IGBT MOD 1200V 300A POWIR 62 |
|
|
FZ1200R12KF4NOSA1IR (Infineon Technologies) |
IGBT MODULE 1200V 1200A |
|
|
BSM75GD60DLCBOSA1IR (Infineon Technologies) |
IGBT MODULE 600V 95A 330W |
|
|
IRG5K30FF06ZIR (Infineon Technologies) |
IGBT MOD 600V 60A EZIRPACK 1 |
|
|
MIO1200-25E10Wickmann / Littelfuse |
IGBT MODULE 2500V 1200A E10 |
|
|
APTGT150A1202GMicrosemi |
IGBT MODULE 1200V 220A 690W SP2 |
|
|
IXB200I600NAWickmann / Littelfuse |
IGBT MODULE 6000V SOT227 |
