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TVS DIODE 64V 103V DO214AB
IGBT MODULE 1200V 640A 2200W E+
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Box |
| 零件状态: | Obsolete |
| igbt型: | NPT |
| 配置: | Three Phase |
| 电压 - 集电极发射极击穿（最大值）: | 1200 V |
| 电流 - 集电极 (ic) (max): | 640 A |
| 功率 - 最大值: | 2200 W |
| vce(on) (max) @ vge, ic: | 2.4V @ 15V, 450A |
| 电流 - 集电极截止（最大值）: | 1 mA |
| 输入电容 (cies) @ vce: | 33 nF @ 25 V |
| 输入: | Standard |
| ntc热敏电阻: | Yes |
| 工作温度: | -40°C ~ 125°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | E+ |
| 供应商设备包: | E+ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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