类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
igbt型: | Trench Field Stop |
电压 - 集电极发射极击穿(最大值): | 1.2 V |
电流 - 集电极 (ic) (max): | 30 A |
电流 - 集电极脉冲 (icm): | 60 A |
vce(on) (max) @ vge, ic: | 2.45V @ 15V, 15A |
功率 - 最大值: | 278 W |
开关能量: | 360µJ (off) |
输入类型: | Standard |
栅极电荷: | 120 nC |
td(开/关)@ 25°c: | -/130ns |
测试条件: | 600V, 15A, 10Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -40°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GN2470K4-GRoving Networks / Microchip Technology |
IC IGBT 700V 3.5A 3DPAK |
|
SGW5N60RUFDTMRochester Electronics |
N-CHANNEL IGBT |
|
IKW40N65ES5XKSA1IR (Infineon Technologies) |
IGBT TRENCH 650V 79A TO247-3 |
|
NGTG15N60S1EGSanyo Semiconductor/ON Semiconductor |
IGBT NPT 600V 30A TO220 |
|
IKZ75N65EH5XKSA1IR (Infineon Technologies) |
IGBT 650V 90A W/DIO TO247-4 |
|
FGA30N65SMDRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
STGWA19NC60HDSTMicroelectronics |
IGBT 600V 52A 208W TO247 |
|
APT64GA90BRoving Networks / Microchip Technology |
IGBT 900V 117A 500W TO247 |
|
RJH60F7DPQ-A0#T0Renesas Electronics America |
IGBT 600V 90A 328.9W TO247A |
|
IKW40N65ET7XKSA1IR (Infineon Technologies) |
IKW40N65ET7XKSA1 |
|
IXGH6N170Wickmann / Littelfuse |
IGBT 1700V 12A 75W TO247 |
|
RGTV00TS65GC11ROHM Semiconductor |
650V 50A FIELD STOP TRENCH IGBT |
|
IKW40N60H3Rochester Electronics |
IKW40N60 - DISCRETE IGBT WITH AN |