类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
igbt型: | NPT |
电压 - 集电极发射极击穿(最大值): | 1200 V |
电流 - 集电极 (ic) (max): | 135 A |
电流 - 集电极脉冲 (icm): | 150 A |
vce(on) (max) @ vge, ic: | 3V @ 15V, 50A |
功率 - 最大值: | 781 W |
开关能量: | 3.6mJ (on), 2.64mJ (off) |
输入类型: | Standard |
栅极电荷: | 340 nC |
td(开/关)@ 25°c: | 25ns/260ns |
测试条件: | 800V, 50A, 1Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 Variant |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRG4BC15UDPBFRochester Electronics |
IGBT, 14A, 600V, N-CHANNEL |
![]() |
RJH60D7DPK-00#T0Renesas Electronics America |
IGBT 600V 90A 300W TO3P |
![]() |
IRGS4B60KD1PBFRochester Electronics |
IGBT, 11A, 600V, N-CHANNEL |
![]() |
RGT16NS65DGTLROHM Semiconductor |
IGBT 650V 16A 94W TO-263S |
![]() |
HGTD1N120BNS9ASanyo Semiconductor/ON Semiconductor |
IGBT 1200V 5.3A 60W TO252AA |
![]() |
IGB30N60H3ATMA1IR (Infineon Technologies) |
IGBT 600V 60A 187W TO263-3 |
![]() |
HGTG12N60A4DSanyo Semiconductor/ON Semiconductor |
IGBT 600V 54A 167W TO247 |
![]() |
STGW75M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
![]() |
STGW60H65FBSTMicroelectronics |
IGBT 650V 80A 375W TO247 |
![]() |
APT36GA60BRoving Networks / Microchip Technology |
IGBT 600V 65A 290W TO-247 |
![]() |
IXXK110N65B4H1Wickmann / Littelfuse |
IGBT 650V 240A 880W TO264 |
![]() |
RGC80TSX8RGC11ROHM Semiconductor |
IGBT |
![]() |
IXGH50N90B2D1Wickmann / Littelfuse |
IGBT 900V 75A 400W TO247AD |