English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | BIMOSFET™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 3000 V |
| 电流 - 集电极 (ic) (max): | 130 A |
| 电流 - 集电极脉冲 (icm): | 600 A |
| vce(on) (max) @ vge, ic: | 3.2V @ 15V, 55A |
| 功率 - 最大值: | 625 W |
| 开关能量: | - |
| 输入类型: | Standard |
| 栅极电荷: | 335 nC |
| td（开/关）@ 25°c: | - |
| 测试条件: | - |
| 反向恢复时间 (trr): | 1.9 µs |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | PLUS247™-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRGB6B60KDPBFRochester Electronics |
IGBT, 13A I(C), 600V V(BR)CES, N |
|
SGP30N60XKSA1Rochester Electronics |
IGBT, 41A, 600V, N-CHANNEL |
|
IKA10N60TXKSA1IR (Infineon Technologies) |
IGBT 600V 11.7A 30W TO220-3 |
|
STGW30H65FBSTMicroelectronics |
IGBT 650V 30A 260W TO-247 |
|
FGP5N60LSSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 10A TO220-3 |
|
APT80GA90SRoving Networks / Microchip Technology |
IGBT PT MOS 8 SINGLE 900 V 80 A |
|
STGWT30V60DFSTMicroelectronics |
IGBT 600V 60A 258W TO3P-3 |
|
IXXH50N60C3D1Wickmann / Littelfuse |
IGBT 600V 100A 600W TO247AD |
|
IXGT40N120B2D1Wickmann / Littelfuse |
IGBT 1200V 75A 380W TO268 |
|
IHW50N65R5XKSA1IR (Infineon Technologies) |
IGBT 650V 80A TO247-3 |
|
IRG4BC30FD-SPBFRochester Electronics |
IGBT, 31A I(C), 600V V(BR)CES, N |
|
FGH60N60SFDTU-F085Sanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 120A TO247 |
|
IKA15N65F5XKSA1IR (Infineon Technologies) |
IGBT 650V 14A TO220-FP |
