RES 56.9K OHM 0.1% 1/4W 1210
IGBT 600V 190A 830W TO247AD
DIODE ZENER 28V 500MW DO35
类型 | 描述 |
---|---|
系列: | GenX3™, XPT™ |
包裹: | Tube |
零件状态: | Active |
igbt型: | PT |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 190 A |
电流 - 集电极脉冲 (icm): | 380 A |
vce(on) (max) @ vge, ic: | 2.2V @ 15V, 70A |
功率 - 最大值: | 830 W |
开关能量: | 2mJ (on), 950µJ (off) |
输入类型: | Standard |
栅极电荷: | 150 nC |
td(开/关)@ 25°c: | 30ns/90ns |
测试条件: | 360V, 70A, 2Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247 (IXXH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRG4BC30KDPBF-INFRochester Electronics |
IGBT, 28A I(C), 600V V(BR)CES, N |
![]() |
APT35GN120L2DQ2GRoving Networks / Microchip Technology |
IGBT 1200V 94A 379W TO264 |
![]() |
FGA40T65UQDFRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
![]() |
SGH15N120RUFTURochester Electronics |
IGBT, 24A, 1200V, N-CHANNEL |
![]() |
STGWT40V60DLFSTMicroelectronics |
IGBT 600V 80A 283W TO3P-3 |
![]() |
IGB30N60TRochester Electronics |
IGB30N60 - DISCRETE IGBT WITHOUT |
![]() |
APT40GR120BRoving Networks / Microchip Technology |
IGBT 1200V 88A 500W TO247 |
![]() |
FGL60N100BNTDTUSanyo Semiconductor/ON Semiconductor |
IGBT 1000V 60A 180W TO264 |
![]() |
IXXX100N60C3H1Wickmann / Littelfuse |
IGBT 600V 170A 695W PLUS247 |
![]() |
FGH30S150PSanyo Semiconductor/ON Semiconductor |
IGBT 1500V 60A TO-247 |
![]() |
STGWT20HP65FBSTMicroelectronics |
IGBT |
![]() |
STGP20V60DFSTMicroelectronics |
IGBT 600V 40A 167W TO220AB |
![]() |
IXYP8N90C3D1Wickmann / Littelfuse |
IGBT 900V 20A 125W TO220 |