English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 65 A |
| 电流 - 集电极脉冲 (icm): | 72 A |
| vce(on) (max) @ vge, ic: | 1.9V @ 15V, 24A |
| 功率 - 最大值: | 250 W |
| 开关能量: | 100µJ (on), 600µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 75 nC |
| td（开/关）@ 25°c: | 40ns/105ns |
| 测试条件: | 400V, 24A, 10Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247AD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STGB19NC60WT4STMicroelectronics |
IGBT 600V 40A 130W D2PAK |
|
SKW20N60FKSA1Rochester Electronics |
IGBT, 40A, 600V, N-CHANNEL |
|
IXA4IF1200UC-TRLWickmann / Littelfuse |
IGBT 1200V 9A 45W TO252AA |
|
STGW30NC60WSTMicroelectronics |
IGBT 600V 60A 200W TO220 |
|
FGB20N60SFSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 40A D2PAK |
|
AIHD15N60RFATMA1IR (Infineon Technologies) |
IC DISCRETE 600V TO252-3 |
|
NGB8206NT4GRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
ISL9V3040S3STSanyo Semiconductor/ON Semiconductor |
IGBT 430V 21A TO263AB |
|
APT44GA60BD30Roving Networks / Microchip Technology |
IGBT 600V 78A 337W TO-247 |
|
IRGPS4067DPBFRochester Electronics |
IRGPS4067 - DISCRETE IGBT WITH A |
|
ISL9V3040D3STSanyo Semiconductor/ON Semiconductor |
IGBT 430V 21A TO252AA |
|
APT25GP90BDQ1GRoving Networks / Microchip Technology |
IGBT 900V 72A 417W TO247 |
|
IKD15N60RAATMA1IR (Infineon Technologies) |
IGBT 600V 30A 250W TO252-3 |
