







IGBT 650V 38A 200W TO220
MODULE DDR SDRAM 512MB 200SODIMM
IC FLASH 128GBIT MMC 169TFBGA
AMPLIFIER
| 类型 | 描述 |
|---|---|
| 系列: | GenX3™, XPT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | PT |
| 电压 - 集电极发射极击穿(最大值): | 650 V |
| 电流 - 集电极 (ic) (max): | 38 A |
| 电流 - 集电极脉冲 (icm): | 80 A |
| vce(on) (max) @ vge, ic: | 2.5V @ 15V, 15A |
| 功率 - 最大值: | 200 W |
| 开关能量: | 270µJ (on), 230µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 19 nC |
| td(开/关)@ 25°c: | 15ns/68ns |
| 测试条件: | 400V, 15A, 20Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 |
| 供应商设备包: | TO-220AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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