类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
igbt型: | Field Stop |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 80 A |
电流 - 集电极脉冲 (icm): | 120 A |
vce(on) (max) @ vge, ic: | 2.9V @ 15V, 40A |
功率 - 最大值: | 290 W |
开关能量: | 1.13mJ (on), 310µJ (off) |
输入类型: | Standard |
栅极电荷: | 120 nC |
td(开/关)@ 25°c: | 25ns/115ns |
测试条件: | 400V, 40A, 10Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
供应商设备包: | I2PAK (TO-262) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HGTP10N120BNSanyo Semiconductor/ON Semiconductor |
IGBT 1200V 35A 298W TO220AB |
|
APT40GR120B2D30Roving Networks / Microchip Technology |
IGBT 1200V 88A 500W TO247 |
|
IGW40T120FKSA1IR (Infineon Technologies) |
IGBT 1200V 75A TO247-3 |
|
IRGB4059DPBFRochester Electronics |
IGBT, 8A I(C), 600V V(BR)CES, N- |
|
FGPF15N60UNDFSanyo Semiconductor/ON Semiconductor |
IGBT 600V 30A 42W TO-220F |
|
RJH1CM5DPQ-E0#T2Rochester Electronics |
IGBT, 30A, 1200V, N-CHANNEL, TO- |
|
APT25GR120BRoving Networks / Microchip Technology |
IGBT 1200V 75A 521W TO247 |
|
IKW50N65SS5XKSA1IR (Infineon Technologies) |
INDUSTRY 14 |
|
APT25GT120BRDQ2GRoving Networks / Microchip Technology |
IGBT 1200V 54A 347W TO247 |
|
IRGP4760PBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
APT54GA60BD30Roving Networks / Microchip Technology |
IGBT 600V 96A 416W TO247 |
|
SKA06N60XKSA1Rochester Electronics |
IGBT, 9A, 600V, N-CHANNEL |
|
APT80GA90LD40Roving Networks / Microchip Technology |
IGBT 900V 145A 625W TO-264 |