English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 7® |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| igbt型: | PT |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 198 A |
| 电流 - 集电极脉冲 (icm): | 250 A |
| vce(on) (max) @ vge, ic: | 2.7V @ 15V, 65A |
| 功率 - 最大值: | 833 W |
| 开关能量: | 605µJ (on), 895µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 210 nC |
| td（开/关）@ 25°c: | 30ns/90ns |
| 测试条件: | 400V, 65A, 5Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-264-3, TO-264AA |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FGL12040WDSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 1200V 80A TO264-3 |
|
STGDL6NC60DT4STMicroelectronics |
IGBT 600V 13A 50W DPAK |
|
FGH60T65SHD-F155Sanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 650V 120A TO247 |
|
FGA90N30TURochester Electronics |
IGBT, 90A, 300V, N-CHANNEL |
|
IRGP4063D-EPBFRochester Electronics |
IGBT W/ULTRAFAST SOFT RECOVERY D |
|
IXGX75N250Wickmann / Littelfuse |
IGBT 2500V 170A 780W PLUS247 |
|
GT30J121(Q)Toshiba Electronic Devices and Storage Corporation |
IGBT 600V 30A 170W TO3PN |
|
IRGP6640D-EPBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
IHW20N120R3FKSA1Rochester Electronics |
IGBT, 40A, 1200V, N-CHANNEL |
|
STGD18N40LZ-1STMicroelectronics |
IGBT 420V 25A 125W IPAK |
|
STGB35N35LZ-1STMicroelectronics |
IGBT 345V 40A 176W I2PAK |
|
SGP10N60ARochester Electronics |
IGBT, 20A, 600V, N-CHANNEL |
|
IXBT20N360HVWickmann / Littelfuse |
IGBT 3600V 70A TO-268HV |
