类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
igbt型: | Field Stop |
电压 - 集电极发射极击穿(最大值): | 600 V |
电流 - 集电极 (ic) (max): | 150 A |
电流 - 集电极脉冲 (icm): | 225 A |
vce(on) (max) @ vge, ic: | 2.9V @ 15V, 75A |
功率 - 最大值: | 452 W |
开关能量: | 2.7mJ (on), 1mJ (off) |
输入类型: | Standard |
栅极电荷: | 250 nC |
td(开/关)@ 25°c: | 26ns/138ns |
测试条件: | 400V, 75A, 3Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AIGB50N65F5ATMA1IR (Infineon Technologies) |
DISCRETE SWITCHES |
|
FGH40T65SPD-F155Sanyo Semiconductor/ON Semiconductor |
IGBT 650V 80A 267W TO-247 |
|
IRGP4790PBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
IXXX300N60B3Wickmann / Littelfuse |
IGBT 600V 550A 2300W TO247 |
|
APT50GT120LRGRoving Networks / Microchip Technology |
IGBT NPT SINGLE 1200V 50A TO-264 |
|
STGW60H65FSTMicroelectronics |
IGBT 650V 120A 360W TO247 |
|
STGD20N45LZAGSTMicroelectronics |
POWER TRANSISTORS |
|
FGH60N60UFDTUSanyo Semiconductor/ON Semiconductor |
IGBT 600V 120A 298W TO247 |
|
IKP08N65F5XKSA1IR (Infineon Technologies) |
IGBT 650V 18A 70W PG-TO220-3 |
|
FGPF4565Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
RGPR30BM40HRTLROHM Semiconductor |
400V 30A IGNITION IGBT |
|
NGTB50N60FLWGSanyo Semiconductor/ON Semiconductor |
IGBT 600V 50A TO247 |
|
IHW30N120R5XKSA1IR (Infineon Technologies) |
HOME APPLIANCES 14 |