English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | PT |
| 电压 - 集电极发射极击穿（最大值）: | 600 V |
| 电流 - 集电极 (ic) (max): | 96 A |
| 电流 - 集电极脉冲 (icm): | 161 A |
| vce(on) (max) @ vge, ic: | 2.5V @ 15V, 32A |
| 功率 - 最大值: | 416 W |
| 开关能量: | 534µJ (on), 466µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 158 nC |
| td（开/关）@ 25°c: | 17ns/112ns |
| 测试条件: | 400V, 32A, 4.7Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247 [B] |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRGP4062D1IR (Infineon Technologies) |
IGBT 600V 55A 217W TO247AC |
|
NGTG50N60FWGRochester Electronics |
IGBT |
|
NGTB35N60FL2WGSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 600V 70A TO247 |
|
STGP6M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
IKZ75N65ES5XKSA1IR (Infineon Technologies) |
IGBT TRENCH 650V 80A TO247-4 |
|
STGD7NC60HT4STMicroelectronics |
IGBT 600V 25A 70W DPAK |
|
FGH40N60SFTUSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 80A TO247-3 |
|
IRGP4650DPBFIR (Infineon Technologies) |
IGBT 600V 76A 268W TO247AC |
|
AIKW50N60CTXKSA1IR (Infineon Technologies) |
IC DISCRETE 600V TO247-3 |
|
NGTB50N60SWGRochester Electronics |
IGBT, 100A, 600V, N-CHANNEL |
|
IKFW40N60DH3EXKSA1Rochester Electronics |
IKFW40N60 - DISCRETE IGBT WITH A |
|
STGF10H60DFSTMicroelectronics |
IGBT 600V 20A 30W TO220FP |
|
IRGB14C40LPBFRochester Electronics |
IRGB14C40 - DISCRETE IGBT WITHOU |
