类型 | 描述 |
---|---|
系列: | POWER MOS 7® |
包裹: | Tube |
零件状态: | Active |
igbt型: | PT |
电压 - 集电极发射极击穿(最大值): | 900 V |
电流 - 集电极 (ic) (max): | 72 A |
电流 - 集电极脉冲 (icm): | 110 A |
vce(on) (max) @ vge, ic: | 3.9V @ 15V, 25A |
功率 - 最大值: | 417 W |
开关能量: | 370µJ (off) |
输入类型: | Standard |
栅极电荷: | 110 nC |
td(开/关)@ 25°c: | 13ns/55ns |
测试条件: | 600V, 25A, 5Ohm, 15V |
反向恢复时间 (trr): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247 [B] |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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